PUMT1(2012) 查看數據表（PDF） - Unisonic Technologies

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PUMT1
(Rev.:2012)

PNP SILICON TRANSISTOR

Unisonic Technologies 

PUMT1

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-40

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current (DC)

IC

-100

mA

Peak Collector Current

ICM

-200

mA

Peak Base Current

IBM

-200

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25°C)

PARAMETER

SYMBOL

CONDITION

MIN TYP MAX UNIT

Collector Cut-Off Current

ICBO

IE=0, VCB=-30V

IE=0, VCB=-30V, TJ=150°C

-100 nA

-10 μA

Emitter Cut-Off Current

IEBO

VEB=-4V, IC=0

-100 nA

DC Current Gain

hFE

IC=-1mA, VCE=-6V

120

Collector-Emitter Saturation Voltage VCE(SAT) IC=-50mA, IB=-5mA (Note 1)

-200 mV

Collector Capacitance

Cc

IE=IE=0, VCB=-12V, f=1MHz

2.2 pF

Transition Frequency

fT

IC=-2mA, VCE=-12V, f=100MHz 100

MHz

Note: 1. Pulse test: Pulse Width≤300μs, Duty Cycle≤2.0%

2. The following characteristics apply to both TR1 and TR2.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R218-001.E

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