PMBD914215 查看數據表（PDF） - NXP Semiconductors.
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PMBD914215 Datasheet PDF : 10 Pages
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NXP Semiconductors
PMBD914
Single high-speed switching diode
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation
Tamb ≤ 25 °C
[1][3] -
Tj
junction temperature
-
Tstg
storage temperature
−65
Max
250
150
+150
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj = 25 °C prior to surge.
[3] Soldering point of cathode tab.
Unit
mW
°C
°C
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Rth(j-t)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
Min Typ Max Unit
[1] -
-
500 K/W
[2] -
-
330 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering point of cathode tab.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
IR
reverse current
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
VFR
forward recovery voltage
Min Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[1] -
-
[2] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
715 mV
855 mV
1
V
1.25 V
25 nA
1
µA
30 µA
50 µA
1.5 pF
4
ns
1.75 V
PMBD914_6
Product data sheet
Rev. 06 — 11 February 2009
© NXP B.V. 2009. All rights reserved.
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