PHM12NQ20T 查看數據表（PDF） - Philips Electronics

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PHM12NQ20T

TrenchMOS™ standard level FET

Philips Electronics 

PHM12NQ20T

TrenchMOS™ standard level FET

Rev. 01 — 30 January 2003

Preliminary data

1. Product profile

1.1 Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

PHM12NQ20T in SOT685-1 (QLPAK).

1.2 Features

s SOT96 (SO-8) footprint compatible

s Surface mount package

s Low thermal resistance

s Low profile.

1.3 Applications

s DC-DC converter primary side switch s Portable equipment applications.

1.4 Quick reference data

s VDS ≤ 200 V

s Ptot ≤ 62.5 W

s ID ≤ 14.4 A

s RDSon ≤ 130 mΩ.

2. Pinning information

Table 1: Pinning - SOT685 (QLPAK), simplified outlines and symbol

Pin

Description

Simplified outline

1,2,3

4

source (s)

gate (g)

1

4

5,6,7,8

mb

drain (d)

mounting base,

connected to drain (d)

mb

8

Bottom view

5

MBL585

SOT685-1 (QLPAK)

[1] Shaded area indicates pin 1 identifier

Symbol

d

g

MBB076

s

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