MMUN2111LT3 查看數據表（PDF） - Leshan Radio Company,Ltd

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MMUN2111LT3

Bias Resistor Transistors PNP Silicon Surface Mount Transistors

Leshan Radio Company,Ltd 

1

IC/IBĂ=Ă10

ā0.1

LESHAN RADIO COMPANY, LTD.

MMUN2111LT1 Series

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2113LT1

1000

TAĂ=Ă-25°C 25°C

75°C

100

TAĂ=Ă75°C

25°C

-25°C

ā0.01

0

1

0.8

0.6

0.4

0.2

00

10

20

30

IC, COLLECTOR CURRENT (mA)

Figure 12. VCE(sat) versus IC

40

10 1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 13. DC Current Gain

100

f = 1 MHz

lE = 0 V

TA = 25°C

10

1

TAĂ=Ă75°C

25°C

-25°C

ā0.1

10

20

30

40

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 14. Output Capacitance

ā0.01

VO = 5 V

50 ā0.001 0 1 ā2

ā3 ā4 ā5

ā6 ā7

ā8

Ă9 10

Vin, INPUT VOLTAGE (VOLTS)

Figure 15. Output Current versus Input Voltage

100

VO = 2 V

TAĂ=Ă-25°C

25°C

10

75°C

1

Ă0.1

0

10

ā20

30

ā40

ā50

IC, COLLECTOR CURRENT (mA)

Figure 16. Input Voltage versus Output Current

MMUN2111S–6/11

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