MMBT2907A
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain
vs Collector Current
500
VCE =-5V
400
125°С
300
200 25°С
100 -40°С
0
-0.1 -0.3 -1 -3 -10 -30 -100 -300
Collector Current, IC (mA)
Base Emitter Saturation Voltage
vs Collector Current
-1
-40°С
-0.8
25°С
-0.6
125°С
-0.4
-0.2
β=10
0
-1
-10
-100
-500
Collector Current, IC (mA)
-100
Collector Cutoff Current vs
Ambient Temperature
VCB=-35V
-10
-1
-0.1
0.01
25
50
75
100
125
Ambient Temperature, Ta(°С)
PNP SILICON TRANSISTOR
Collector Emitter Saturation Voltage
vs Collector Current
-0.5
β=10
-0.4
-0.3
25°С
-0.2
-0.1
0
-1
-1
125°С
-40°С
-10
-100
Collector Current, IC (mA)
Base Emitter on Voltage
vs Collector Current
-500
-0.8 -40°С
-0.6
25°С
-0.4
125°С
VCE =-5V
-0.2
0
-0.1
-1
-10
-25
Collector Current, IC (mA)
Input And Output Capacitance vs
Reverse Bias Voltage
20
16
12
8
4
0
0.1
Cte
Cob
1
10
-50
Reverse Bias Voltage (V)
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