MMBT2369ALT1 查看數據表（PDF） - ON Semiconductor

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MMBT2369ALT1

Switching Transistors NPN Silicon

ON Semiconductor 

MMBT2369LT1, MMBT2369ALT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (Note 3)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

15

–

Vdc

–

Collector–Emitter Breakdown Voltage

(IC = 10 µAdc, VBE = 0)

V(BR)CES

40

–

Vdc

–

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

40

–

Vdc

–

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

4.5

–

Vdc

–

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 150°C)

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0)

ICBO

–

–

ICES

MMBT2369A

–

µAdc

–

0.4

–

30

µAdc

–

0.4

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 0.35 Vdc)

(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C)

(IC = 30 mAdc, VCE = 0.4 Vdc)

(IC = 100 mAdc, VCE = 2.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE

–

MMBT2369

40

–

120

MMBT2369A

–

–

120

MMBT2369A

40

–

–

MMBT2369A

20

–

–

MMBT2369A

30

–

–

MMBT2369

20

–

–

MMBT2369A

20

–

–

Collector–Emitter Saturation Voltage (Note 3)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)

(IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)

Base–Emitter Saturation Voltage (Note 3)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C)

(IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

MMBT2369

–

MMBT2369A

–

MMBT2369A

–

MMBT2369A

–

MMBT2369A

–

VBE(sat)

MMBT2369A

0.7

MMBT2369A

–

MMBT2369A

–

MMBT2369A

–

Vdc

–

0.25

–

0.20

–

0.30

–

0.25

–

0.50

Vdc

–

0.85

–

1.02

–

1.15

–

1.60

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

–

pF

–

4.0

Small Signal CurrentGain

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

hfe

–

5.0

–

–

SWITCHING CHARACTERISTICS

Storage Time

(IB1 = IB2 = IC = 10 mAdc)

ts

ns

–

5.0

13

Turn–On Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)

ton

ns

–

8.0

12

Turn–Off Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

toff

ns

–

10

18

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