MJL21193 查看數據表（PDF） - Inchange Semiconductor

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产品描述 (功能)

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MJL21193

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

MJL21193

DESCRIPTION

·Total Harmonic Distortion Characterized

·High DC Current Gain

·High Area of Safe Operation

APPLICATIONS

·Designed for high power audio output, disk head positioners

and linear applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Emitter Voltage

-400

V

VCEO

Collector-Emitter Voltage

-250

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-16

A

ICM

Collector Current-Pulsed

-30

A

IBB

Base Current-Continuous

-5

A

PD

Total Power Dissipation (TC=25℃)

200

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

Rth j-C ThermalResistance Junction To Case

0.7

UNIT

℃/W

isc Website：www.iscsemi.cn

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