MJD200(2001) 查看數據表（PDF） - ON Semiconductor
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MJD200 Datasheet PDF : 8 Pages
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TA TC
2.5 25
2 20
1.5 15
1 10
0.5 5
00
25
MJD200 MJD210
TA (SURFACE MOUNT)
TC
50
75
100
125
T, TEMPERATURE (°C)
Figure 1. Power Derating
VCC
+ā30 V
25 µs
+11 V
RC
0
RB
SCOPE
-ā9 V
tr, tf ≤ 10 ns
51
DUTY CYCLE = 1%
D1
-ā4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
150
ą1N5825 USED ABOVE IB ≈ 100 mA
ąMSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT,
REVERSE ALL POLARITIES
Figure 2. Switching Time Test Circuit
1K
500
td
300
200
100
50
30
20
tr
VCC = 30 V
IC/IB = 10
10
TJ = 25°C
5
3
2
MJD200
MJD210
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Turn–On Time
10K
5K
VCC = 30 V
3K
ts
IC/IB = 10
2K
IB1 = IB2
1K
TJ = 25°C
500
300
200
100
50
30
20
MJD200
tf
MJD210
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Turn–Off Time
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