MJD200(2001) 查看數據表（PDF） - ON Semiconductor
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MJD200 Datasheet PDF : 8 Pages
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1
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07
0.05
0.02
0.01
0.03
0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
0.2
MJD200 MJD210
RθJC(t) = r(t) θJC
RθJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5
1
2
5
10
20
t, TIME (ms)
Figure 8. Thermal Response
50
100
200
10
5Ăms
5
3
2
TJ = 150°C
100õs
1Ăms
1
500õs
dc
0.1
0.01
0.3
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
ą(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
ąCURVES APPLY BELOW
ąRATED VCEO
1
2 3 5 7 10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Case 369 may be ordered by adding a “–1” suffix to the
device title (i.e. MJD200–1)
200
TJ = 25°C
Cib
100
70
50
Cob
30
MJD200 (NPN)
MJD210 (PNP)
20
0.4 0.6 1
2
4 6 10
20
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Capacitance
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