MBT3904DW1T1G 查看數據表（PDF） - ON Semiconductor
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MBT3904DW1T1G Datasheet PDF : 7 Pages
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MBT3904DW1T1, MBT3904DW2T1
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0
Cibo
3.0
2.0
Cobo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20 30 40
TJ = 25°C
TJ = 125°C
5000
3000 VCC = 40 V
2000 IC/IB = 10
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
500
500
300
IC/IB = 10
300
VCC = 40 V
200
200
IC/IB = 10
100
70
50
30
20
10
7
5
1.0
tr @ VCC = 3.0 V
40 V
15 V
td @ VOB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turnā-āOn Time
100
70
50
30
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
500
300
200 IC/IB = 20
IC/IB = 10
t′s = ts - 1/8 tf
IB1 = IB2
100
70
50
IC/IB = 20
30
IC/IB = 10
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
500
300
VCC = 40 V
200
IB1 = IB2
IC/IB = 20
100
70
50
30
IC/IB = 10
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
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4
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