HYB3165805TL-50 查看數據表（PDF） - Siemens AG
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HYB3165805TL-50 Datasheet PDF : 32 Pages
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HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
RAS
CAS
V
IH
tRCD
VIL
tCRP
V
IH
VIL
tCSH
tRAS
tHPC
tCAS
tCP
tCAS
tRHCP
tRSH
tCAS
tRAL
Address
tASR tRAH tASC tCAH
V
IH
VIL
Row
Addr
Column 1
tRAD
tCWL
tASC tCAH
Column 2
tCWL
VIH
WE
VIL
tWCS
tWCH tWCS
tWP
tWCH
tWP
tASC tCAH
Column N
tWCS
tRWL
tCWL
tWCH
tWP
tRP
tCRP
V
OH
OE
VOL
V
IH
I/O (Input) VIL
tDS
tDH
Data In 1
“H” or “L”
tDS tDH
Data In 2
tDS tDH
Data In N
WL8
Hyper Page Mode (EDO) Early Write Cycle
Semiconductor Group
169
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