GBPC101(2008) 查看數據表（PDF） - Vishay Semiconductors
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GBPC101 Datasheet PDF : 4 Pages
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GBPC1005 thru GBPC110
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
GBPC
1005
GBPC
101
GBPC
102
GBPC
104
GBPC
106
GBPC
108
GBPC
110
UNIT
Maximum instantaneous forward
voltage drop per diode
1.5 A
VF
1.0
V
Maximum DC reverse current
at rated DC blocking voltage
per diode
TA = 25 °C
TA = 125 °C
IR
5.0
500
µA
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
21
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GBPC
1005
GBPC
101
GBPC
102
GBPC
104
GBPC
106
GBPC
108
GBPC
110
UNIT
Typical thermal resistance (1)
RθJA
RθJC
12
8.0
°C/W
Note:
(1) Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
GBPC106-E4/51
2.5
51
BASE QUANTITY
100
DELIVERY MODE
Paper box
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
5.0
Case Temperature,
TC Heatsink Mounting
4.0
4.0 x 4.0 x 0.11" Thk.
(10.5 x 10.5 x 0.3 cm)
Al. Plate
60 Hz Resistive or
3.0
Inductive Load
2.0
1.0
Ambient Temperature, TA
P.C.B. Mounting
0.375" (9.5 mm) Lead Length
0
0
50
100
150
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
60
TC = 60 °C
Single Sine-Wave
50
40
30
20
10
0
1
1.0 Cycle
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88611
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 15-Apr-08
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