CT40TMH-8 查看數據表（PDF） - Renesas Electronics

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CT40TMH-8

INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE

Renesas Electronics 

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT40TMH-8

STROBE FLASHER USE

PERFORMANCE CURVES

MAXIMUM PULSE COLLECTOR CURRENT

200

CM = 1500µF

160 TC <= 70°C

120

80

40

0

0

10 20 30 40 50

GATE-EMITTER VOLTAGE VGE (V)

Figure 1

APPLICATION EXAMPLE

IXe

TRIGGER Vtrig

SIGNAL

Vtrig

RG

VG

VCE

IGBT

CM

+

VCM

–

IGBT GATE VG

VOLTAGE

Xe TUBE Ixe

CURRENT

RECOMMEND CONDITION

VCM = 330V

IP = 180A

CM = 1200µF

VGE = 28V

MAXIMUM CONDITION

350V

200A

1500µF

Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.

And reverse gate current during turn-off must be kept less than 1A.

(In general, it is satisfied if RG ≥ 30Ω)

Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.

So please handle carefully not to suffer from electrostatic charge.

Notice 3. The operation life should be endured 5,000 shots under the charge current

(Ixe ≤ 200A : full luminescence condition) of main condenser (CM=1500µF).

Repetition period under full luminescence condition is over 3 seconds.

Notice 4. Total operation hours must be applied within 5,000 hours.

Feb.1999

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