BSC032N03SG 查看數據表（PDF） - Infineon Technologies
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BSC032N03SG Datasheet PDF : 10 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
14 Typ. gate charge
V GS=f(Q gate); I D=25 A pulsed
parameter: V DD
12
10
125 °C
100 °C
25 °C
8
BSC032N03S G
15 V
6V
24 V
10
6
4
2
1
0
1
10
100
1000
0
20
40
60
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
38
V GS
35
Qg
32
29
V g s(th)
26
23
Q g(th)
20
-60
-20
20
60 100 140 180
T j [°C]
Q gs
Rev. 1.64
page 7
Q sw
Q gd
Q gate
2009-10-22
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