BF904 查看數據表（PDF） - NXP Semiconductors.
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BF904 Datasheet PDF : 14 Pages
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NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904; BF904R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
drain-source voltage
ID
drain current
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
see Fig.3
BF904
Tamb ≤ 50 °C; note 1
BF904R
Tamb ≤ 40 °C; note 1
Tstg
storage temperature
Tj
operating junction temperature
Note
1. Device mounted on a printed-circuit board.
MIN.
−
−
−
−
MAX.
7
30
±10
±10
UNIT
V
mA
mA
mA
−
200
mW
−
200
mW
−65
+150
°C
−
150
°C
250
handbook, halfpage
Ptot
(mW)
200
BF904
150
BF904R
100
MRA770
50
0
0
50
100
150
200
Tamb (o C)
Fig.3 Power derating curves.
Rev. 06 - 13 November 2007
3 of 14
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