BD441 查看數據表（PDF） - Inchange Semiconductor
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BD441 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBE-1
Base-emitter on voltage
IC=10mA ; VCE=5V
VBE-2
Base-emitter on voltage
IC=2A ; VCE=1V
VCEO(SUS)
Collector-emitter
sustaining voltage
BD439
BD441
IC=0.1A; IB=0
BD439 VCB=60V; IE=0
ICBO
Collector cut-off current
BD441 VCB=80V; IE=0
BD439 VCE=60V; VBE=0
ICES
Collector cut-off current
BD441 VCE=80V; VBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
BD439
BD441
IC=10mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=1V
hFE-3
DC current gain
BD439
BD441
IC=2A ; VCE=1V
fT
Transition frequency
IC=250mA; VCE=1V
Product Specification
BD439 BD441
MIN TYP. MAX UNIT
0.8
V
0.58
V
1.5
V
60
V
80
100 μA
100 μA
1
mA
20
130
15
40
140
25
15
3
MHz
2
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