BCP68 查看數據表（PDF） - Philips Electronics
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BCP68 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
BCP68
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
91
K/W
10
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBE
Cc
fT
hh----FF---EE---12-
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BCP68-25
IE = 0; VCB = 25 V
IE = 0; VCB = 25 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 5 mA; VCE = 10 V
IC = 500 mA; VCE = 1 V; see Fig.2
IC = 1 A; VCE = 1 V; see Fig.2
IC = 500 mA; VCE = 1 V; see Fig.2
collector-emitter saturation voltage IC = 1 A; IB = 100 mA
base-emitter voltage
IC = 5 mA; VCE = 10 V
IC = 1 A; VCE = 1 V
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
DC current gain ratio of the
complementary pairs
IC = 0.5 A; VCE = 1 V
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
50 −
85 −
60 −
100 nA
10 µA
100 nA
−
375
−
160 −
375
−
−
500 mV
−
620 −
mV
−
−
1
V
−
38 −
pF
40 −
−
MHz
−
−
1.6
1999 Apr 08
3
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