BCP68 查看數據表（PDF） - Philips Electronics
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BCP68 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
BCP68
FEATURES
• High current (max. 1 A)
• Low voltage (max. 20 V).
APPLICATIONS
• General purpose switching and amplification under high
current conditions.
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complement: BCP69.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
32
20
5
1
2
200
1.37
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08
2
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