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BC856

SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS

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SOT23 PNP SILICON PLANAR

GENERAL PURPOSE TRANSISTORS

ISSUE 6 - APRIL 1997

PARTMARKING DETAILS

BC856A–3A BC858C–3L

BC856B–Z3B BC859A–Z4A

BC857A–Z3E BC859B–4B

BC857B–3F BC859C–Z4C

BC857C–3G BC860A–Z4E

BC858A–3J BC860B–4F

BC858B–3K BC860C–4GZ

COMPLEMENTARY TYPES

BC856

BC846

BC857

BC847

BC858

BC848

BC859

BC849

BC860

BC850

BC856

BC858

BC860

BC857

BC859

E

C

B

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Base Current

Base Current

Power Dissipation at Tamb=25°C

Operating and Storage

Temperature Range

SYMBOL

VCBO

VCES

VCEO

VEBO

IC

IEM

IBM

IEM

Ptot

Tj:Tstg

BC856

-80

-80

-65

BC857 BC858 BC859

-50

-30

-30

-50

-30

-30

-45

-30

-30

-5

-100

-200

-200

-200

330

-55 to +150

BC860

-50

-50

-45

UNIT

V

V

V

V

mA

mA

mA

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

BC856 BC857 BC858 BC859 BC860 UNIT CONDITIONS.

Collector Cut-Off Current ICBO Max

-15

nA VCB = -30V

Max

-4

µA VCB = -30V

Tamb=150°C

Collector-Emitter

Saturation Voltage

VCE(sat) Typ -75 -75 -75 -75 -75 mV

Max. -300 -300 -300 -250 -250

Typ

Max.

-250

mV

-650

Typ

Max.

-300

mV

-600

IC=-10mA,

IB=-0.5mA

IC=-100mA,

IB=-5mA

IC=-10mA*

Base-Emitter

Saturation Voltage

Base-Emitter Voltage

VBE(sat) Typ

Typ

VBE Min

Typ

Max

-700

mV

-850

mV

-600 -600 -600 -580 -580 mV

-650 -650 -650 -650 -650

-750 -750 -750 -750 -750

IC=-10mA,

IB=-0.5mA

IC=-100mA,

IB=-5mA

IC=-2mA

VCE=-5V

Max

-820

mV IC=-10mA

VCE=-5V

* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the

operating point IC = 11mA, VCE = 1V at constant base current.

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