BC817-16 查看數據表（PDF） - Philips Electronics
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BC817-16 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistor
Product specification
BC817
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BC817
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 mA; VCE = 1 V; note 1;
see Figs 2, 3 and 4
BC817-16
BC817-25
BC817-40
hFE
VCEsat
VBE
Cc
fT
DC current gain
IC = 500 mA; VCE = 1 V; note 1
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
base-emitter voltage
IC = 500 mA; VCE = 1 V; note 2
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz;
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz;
Notes
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. VBE decreases by approx. 2 mV/K with increasing temperature.
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
5
µA
−
−
100 nA
100 −
100 −
160 −
250 −
40 −
−
−
−
−
−
5
100 −
600
250
400
600
−
700 mV
1.2 V
−
pF
−
MHz
1999 Jun 01
3
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