BAS316 查看數據表（PDF） - Galaxy Semi-Conductor

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BAS316

Silicon Epitaxial Planar Diode

Galaxy Semi-Conductor 

Production specification

Silicon Epitaxial Planar Diode

BAS316

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol Min

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)R

100

-

V

IR=100μA

Forward Voltage

VF

Reverse Current

IR

Capacitance between terminals CT

Reverse Recovery Time

trr

0.715 V

0.855

1.0

1.25

-

1.0

μA

0.03

-

1.5

pF

-

4.0

ns

IF=1.0mA

IF=10mA

IF=50mA

IF=150mA

VR=75V

VR=25V

VR=0,f=1.0MHz

IF=IR=10mA,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

B013

Rev.B

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