BAL99(2003) 查看數據表（PDF） - Philips Electronics

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BAL99
(Rev.:2003)

High-speed diode

Philips Electronics 

Philips Semiconductors

High-speed diode

Product specification

BAL99

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Vfr

forward recovery voltage

CONDITIONS

MAX. UNIT

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

715 mV

855 mV

1

V

1.25 V

VR = 25 V

30 nA

VR = 70 V

1

µA

VR = 25 V; Tj = 150 °C

30 µA

VR = 70 V; Tj = 150 °C;

50 µA

f = 1 MHz; VR = 0; see Fig.6

1.5 pF

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

4

ns

when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth(j-tp)

Rth(j-a)

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

Note

1. Device mounted on an FR4 printed-circuit board.

VALUE

360

500

UNIT

K/W

K/W

2003 Dec 12

3

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