APT5012 查看數據表（PDF） - Advanced Power Technology

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APT5012

POWER MOS V® - 500V 40A 0.120Ω

Advanced Power Technology  

200

100

50

OPERATION HERE

LIMITED BY RDS (ON)

10µS

100µS

1mS

10

5

10mS

1

.5

TC =+25°C

TJ =+150°C

SINGLE PULSE

100mS

DC

.1

1

5 10

50 100

500

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

20

ID = ID [Cont.]

VDS=100V

16

VDS=250V

12

VDS=400V

8

4

0

0

100 200 300 400 500

Qg, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

30,000

10,000

5,000

1,000

500

APT5012WVR

Ciss

Coss

Crss

100

.01

.1

1

10

50

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

200

100

TJ =+150°C TJ =+25°C

50

10

5

1

0

0.4

0.8 1.2

1.6

2.0

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

1.80 (.071)

1.25 (.049)

TO-267 Package Outline

20.45 (.805)

20.20 (.795)

10.23 (.403)

10.10 (.398)

24.15 (.951)

23.60 (.929)

16.90 (.665)

16.40 (.646)

20.32 (.800)

20.07 (.790)

4.19 (.165)

3.95 (.156)

19.05 (.750)

12.70 (.500)

4.20 (.165) BSC

7.40 (.291)

6.60 (.260)

1.65 (.065) Dia. Typ.

1.40 (.055) 3 Leads

5.00 (.197) BSC

Dimensions in Millimeters and (Inches)

Drain

Source

Gate

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

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