2SH26 查看數據表（PDF） - Renesas Electronics

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2SH26

Silicon N Channel IGBT High Speed Power Switching

Renesas Electronics 

2SH26

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

D=1

Tc = 25°C

0.5

0.3

0.2

0.1

0.1

0.05

0.03

0.02

0.011shot

pulse

0.01

10 µ

100 µ

θch – c(t) = γ s (t) • θ ch – c

θch – c = 2.5 °C/W, Tc = 25 °C

PDM

PW

T

D=

PW

T

1m

10 m

100 m

1

10

Pulse Width PW (S)

Switching Time Test Circuit

Ic Monitor

Vin Monitor

VCE

Monitor

Rg

D.U.T.

Vin ± 15 V

RL

VCC

0

Vin

Waveform

10%

90%

VCE

90%

td(on)

10%

tr

ton

90%

Ic

10%

td(off)

tf

toff

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