2SD1877 查看數據表（PDF） - Inchange Semiconductor

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2SD1877

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1877

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

800

V

VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A

5

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=2.5A;IB=0.8A

VCB=800V; IE=0

VCB=1500V; RBE=0

VEB=4V; IC=0

1.5

V

10

μA

1.0

mA

40

130 mA

hFE-1

DC current gain

IC=0.5A ; VCE=5V

8

hFE-2

DC current gain

IC=2.5A ; VCE=5V

3.5

7

VF

Diode forward voltage

tf

Fall time

IEC=4A

IC=3A;RL=50Ω

IB1=0.8A;IB2=-1.6A;VCC=200V

2.0

V

0.1

0.3

μs

2

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