2SD1026 查看數據表（PDF） - Inchange Semiconductor
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2SD1026 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1026
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A, IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 20mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A ,IB= 20mA
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
1.5
V
2.0
V
0.1
mA
ICEO
Collector Cutoff current
VCE= 100V, IB=B 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
5
mA
fT
Current-Gain—Bandwidth Product IC= 1.5A ; VCE= 10V
20
MHz
hFE
DC Current Gain
IC= 10A ; VCE= 3V
1500
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC = 15A,IB1 = -IB2= 20mA;
RL= 2Ω;VBB2= 4V
2.0
μs
5.0
μs
3.0
μs
isc Website：www.iscsemi.cn
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