2SC4505 查看數據表（PDF） - TY Semiconductor

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2SC4505

NPN Epitaxial Planar Silicon Transistor

TY Semiconductor 

SMD Type

Transistors

Product specification

2SC4505

Features

High breakdown voltage. (BVCEO = 400V)

Low saturation voltage,

typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.

High switching speed, typically tf = 1.7ìs at Ic =100mA.

Absolute Maximum Ratings Ta = 25

Parameter

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

Symbol

VCBO

VCEO

VEBO

IC

CollectorPower Dissipation

PC

Junotion Temperature

TJ

storage Temperature

Tstg

*1 Single pulse pw=20ms,Duty=1/2

*2 When mounted on a 40X40X0.7 mm ceramic board.

Rating

400

400

7

0.1

0.2

0.5

2

150

-55 to 150

Unit

V

V

V

A

A *1

W *2

W

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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