2SC3647 查看數據表（PDF） - Unisonic Technologies
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2SC3647 Datasheet PDF : 5 Pages
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2SC3647
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Collector Current (Pulse)
ICP
3
A
Collector Dissipation
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
DC Current Gain
Turn-ON Time
Storage Time
Fall Time
Gain-Bandwidth Product
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VBE(SAT)
Cob
hFE
tON
tSTG
tF
fT
■ CLASSIFICATION OF hFE
RANK
RANGE
R
100 ~ 200
TEST CONDITIONS
IC = 10μA, IE =0
IC = 1mA, RBE =∞
IE = 10μA, IC=0
VCB = 100V, IE =0
VEB = 4V, IC =0
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
VCB = 10V, f =1MHz
VCE = 5V, IC = 100mA
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VCE = 10V, IC = 100mA
S
140 ~ 280
MIN TYP MAX UNIT
120
V
100
V
6
V
100 nA
100 nA
0.13 0.4 V
0.85 1.2 V
16
pF
100
400
80
ns
1000
ns
50
ns
120
MHz
T
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
5
www.unisonic.com.tw
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QW-R208-039,C
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