2SC2706 查看數據表（PDF） - Inchange Semiconductor
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2SC2706 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2706
DESCRIPTION
·With TO-3P(I) package
·High power dissipation
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
140
140
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
2
A
PT
Total power dissipation
TC=25℃
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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