2N7000 查看數據表（PDF） - Philips Electronics
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2N7000 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
Product specification
2N7000
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
VDG
±VGSO
ID
IDM
Ptot
Tstg
Tj
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
drain current
total power dissipation
storage temperature range
junction temperature
open drain
DC value
peak value
Tamb = 25 °C
MIN. MAX. UNIT
−
60 V
−
60 V
−
40 V
−
280 mA
−
1.3 A
−
830 mW
−55 150 °C
−
150 °C
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
from junction to ambient
VALUE
150
UNIT
K/W
April 1995
3
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