2N5550(RevB) 查看數據表（PDF） - Fairchild Semiconductor
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2N5550 Datasheet PDF : 2 Pages
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2N5550
NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VCEO= 140V
• Collector Dissipation: PC (max)=625mW
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
160
V
140
V
6
V
600
mA
625
mW
150
°C
-55 ~ 150
°C
• Refer to 2N5551 for graphs
TO-92
1.Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
COB
NF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=100V, IE=0
VEB= 4V, IC=0
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, VCE=10V
VCB=10V, IE=0
f=1MHz
IC=250µA, VCE=5V
RS=1KΩ
f=10Hz to 15.7KHz
Min Typ Max Unit
160
V
140
V
6
V
100
nA
50
nA
60
60
250
20
0.15
V
0.25
V
1
V
1.2
V
100
300 MHz
6
pF
10
dB
©1999 Fairchild Semiconductor Corporation
Rev. B
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