2N5210TA 查看數據表（PDF） - Fairchild Semiconductor
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2N5210TA Datasheet PDF : 7 Pages
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Typical Characteristics
NPN General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
1200
1000
125 oC
VCE = 5.0V
800
25 oC
600
400
200
- 40 oC
0
0.01 0.03
0.1
0.3
1
3
10
30
100
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1.0
- 40 oC
0.8
0.6
0.4
0.2
0.1
25 oC
125 oC
β = 10
1
10
100
IC - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.30
0.25 β = 10
0.20
125 oC
0.15
25 oC
0.10
0.05
0.1
- 40 oC
1
10
100
I - COLLECTOR CURRENT (mA)
C
Base-Emitter ON Voltage vs
Collector Current
1.0
0.8
- 40 oC
25 oC
0.6
125 oC
0.4
0.2
0.1
VCE = 5.0V
1
10
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
VCB = 45V
1
0.1
25
50
75
100
125
150
TA - AMBIE NT TEMP ERATURE (°C)
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