2N4900 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2N4900 Datasheet PDF : 3 Pages
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Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N4898 2N4899 2N4900
DESCRIPTION
··With TO-66 package
·Low collector-emitter saturation voltage
·Excellent safe operating area
·2N4900 complement to type 2N4912
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N4898
VCBO
Collector-base voltage 2N4899
2N4900
2N4898
VCEO
Collector-emitter voltage 2N4899
2N4900
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
40
60
80
40
60
80
5
1.0
4.0
1.0
25
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
7.0
UNIT
℃/W
JMnic
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