FMMT918TA 查看數據表（PDF） - Diodes Incorporated.

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FMMT918TA

SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR

Diodes Incorporated. 

SOT23 NPN SILICON PLANAR

VHF/UHF TRANSISTOR

ISSUE 2 – JANUARY 1996

PARTMARKING DETAILS – 3B

FMMT918

E

C

B

ABSOLUTE MAXIMUM RATINGS.

SOT23

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Continuous Collector Current

IC

Power Dissipation at Tamb=25°C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX.

30

V

15

V

3

V

100

mA

330

mW

-55 to +150

°C

UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO 30

V

IC=1µA, IE=0

Collector-Emitter

Sustaining Voltage

VCEO(sus) 15

V

IC=3mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO 3

V

IE=10µA, IC=0

Collector Cut-Off Current ICBO

Collector-Emitter

Saturation Voltage

VCE(sat)

0.05 µA

0.4

V

VCB=15V, IE=0

IC=10mA, IB=1mA

Base-Emitter

Saturation Voltage

VBE(sat)

1.0

V

IC=10mA, IB=1mA

Static Forward Current hFE

20

Transfer Ratio

IC=3mA, VCE=1V

Transition Frequency

fT

600

MHz IC=4mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

Input Capacitance

Cibo

Noise Figure

N

3.0

pF

1.7

pF

1.6

pF

6.0

dB

Common Emitter

Gpe

Power Gain

15

dB

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

VCB=0V, f=1MHz

VCB=10V, f=1MHz

VEB=0.5V,f=1MHz

VCE=6V, IC=1mA

f=60MHz, RG=400Ω

VCB=12V, IC=6mA

f=200MHz

3 - 168

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