FJN3303F 查看數據表（PDF） - Fairchild Semiconductor

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FJN3303F

High Voltage Fast-Switching NPN Power Transistor

Fairchild Semiconductor 

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

tON

tSTG

tF

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Turn On Time

Storage Time

Fall Time

IC = 500μA, IE = 0

IC = 5mA, IB = 0

IE = 500μA, IC = 0

VCB = 700V, IE = 0

VEB = 9V, IC = 0

VCE = 2V, IC = 0.5A

VCE = 2V, IC = 1.0A

IC = 0.5A, IB = 0.1A

IC = 1.0A, IB = 0.25A

IC = 1.5A, IB = 0.5A

IC = 0.5A, IB = 0.1A

IC = 1.0A, IB = 0.25A

VCE = 10V, IC = 0.1A

VCC = 125V, IC = 1A

IB1 = - IB2 = -0.2A

RL = 125Ω

Min.

700

400

9

14

5

4

Typ.

Max.

10

10

23

Units

V

V

V

μA

μA

0.5

V

1.0

V

3.0

V

1.0

V

1.2

V

MHz

1.1 μs

4.0 μs

0.7 μs

© 2009 Fairchild Semiconductor Corporation

FJN3303F Rev. A1

2

www.fairchildsemi.com

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