FDW2502PZ 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FDW2502PZ Datasheet PDF : 6 Pages
| |||
Typical Characteristics
5
ID = - 4.4A
4
3
VDS = - 5V
-10V
–15V
2
1
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -4.5V
0.1 SINGLE PULSE
R θJA = 250oC/W
TA = 25 oC
100µ s
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2100
1800
1500
1200
900
600
300
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
15
RθJA = 250°C/W
TA = 25°C
10
5
0
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 250 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDW2502PZ Rev. B (W)
Share Link: 