FDW2501NZ(2002) 查看數據表（PDF） - Fairchild Semiconductor
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FDW2501NZ Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = 5.5 A
4
3
VDS = 5V
10V
15V
2
1
0
0
2
4
6
8
10
12
14
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 4.5V
SINGLE PULSE
0.1
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2000
1600
1200
CISS
f = 1 MHz
VGS = 0 V
800
400
0
0
COSS
CRSS
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 125oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDW2501NZ Rev E1 (W)
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