BCR198WH6327 查看數據表（PDF） - Infineon Technologies

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BCR198WH6327

PNP Silicon Digital Transistor

Infineon Technologies 

BCR198...

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Input forward voltage

Input reverse voltage

Collector current

Total power dissipation-

BCR198, TS ≤ 102°C

BCR198S, TS ≤ 115°C

BCR198W, TS ≤ 124°C

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point1)

BCR198

BCR198S

BCR198W

Symbol

VCEO

VCBO

Vi(fwd)

Vi(rev)

IC

Ptot

Tj

Tstg

Symbol

RthJS

Value

50

50

80

10

100

200

250

250

150

-65 ... 150

Value

≤ 240

≤ 140

≤ 105

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

mA

mW

°C

Unit

K/W

2

2011-08-30

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