SBC846BDW1T1G 查看數據表（PDF） - ON Semiconductor
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SBC846BDW1T1G Datasheet PDF : 11 Pages
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BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC848CDW1
1.0
VCE = 5 V
0.9
0.8
0.7
−55°C
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.1
0.0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 29. VBE(on) at VCE = 5 V
1000
VCE = 10 V
TA = 25°C
100
10
0.1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 30. Current − Gain − Bandwidth
Product
10
1
0.1
2
TA = 25°C
IC =
IC =
TA = 25°C
1.6 10 mA
20 mA
Cib
1.2
IC =
50 mA
Cob
0.8
IC =
100 mA
0.4
1
10
VR, REVERSE VOLTAGE (V)
Figure 31. Capacitances
0
100
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 32. Collector Saturation Region
−0.2 VCE = 5 V
−0.6
−1
−1.4
−1.8
qVB, for VBE
−2.2
−55°C to 150°C
−2.6
−3
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 33. Base−Emitter Temperature Coefficient
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