BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
NF
Min
Typ
Max Unit
V
45
−
−
30
−
−
V
50
−
−
30
−
−
V
50
−
−
30
−
−
V
6.0
−
−
5.0
−
−
−
−
15
nA
−
−
5.0
mA
−
−
270
−
420
520
800
−
−
0.25
V
−
−
0.6
−
0.7
−
V
−
0.9
−
580
660
700
mV
−
−
770
100
−
−
MHz
−
−
1.5
pF
dB
−
−
10
ORDERING INFORMATION
Device
Specific Marking
Package
Shipping†
BC847CDXV6T1G
SBC847CDXV6T1G
BC847CDXV6T5G
4000 Units / Tape & Reel
1G
SOT−563
(Pb−Free)
8000 Units / Tape & Reel
BC848CDXV6T1G
1L
SOT−563
(Pb−Free)
4000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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