MRF8P8300HR6 查看數據表（PDF） - Freescale Semiconductor

零件编号

产品描述 (功能)

生产厂家

MRF8P8300HR6

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, 790--820 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

340

—

IMD Symmetry @ 290 W PEP, Pout where IMD Third Order

Intermodulation  30 dBc

IMDsym

—

35

—

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

35

—

Gain Flatness in 30 MHz Bandwidth @ Pout = 96 W Avg.

Gain Variation over Temperature

(--30°C to +85°C)

GF

—

0.5

—

∆G

—

0.0185

—

Output Power Variation over Temperature

(--30°C to +85°C)

∆P1dB

—

0.0076

—

Unit

W

MHz

MHz

dB

dB/°C

dB/°C

RF Device Data

Freescale Semiconductor

MRF8P8300HR6 MRF8P8300HSR6

3

Share Link: