HA5022/883
Die Characteristics
DIE DIMENSIONS:
65 x 100 x 19 mils ± 1 mils
1650 x 2540 x 483µm ± 25.4µm
METALLIZATION:
Type: Metal 1: AlCu (1%), Metal 2: AlCu (1%)
Thickness: Metal 1: 8kÅ ± 0.4kÅ, Metal 2: 16kÅ ± 0.8kÅ
WORST CASE CURRENT DENSITY:
1.62 x 105 A/cm2 at 35mA
SUBSTRATE POTENTIAL (Powered Up): V-
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ± 0.4kÅ
TRANSISTOR COUNT: 124
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA5022/883
V+
+IN1
DIS1
V-
NC
DIS2
+IN2
Spec Number 511107-883
263