MAGX-000912-500L0S 查看數據表（PDF） - M/A-COM Technology Solutions, Inc.

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MAGX-000912-500L0S

GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty

M/A-COM Technology Solutions, Inc. 

MAGX-000912-500L0x

GaN on SiC HEMT Pulsed Power Transistor

500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty

Rev. V6

Electrical Specifications: Freq. = 960 - 1215 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min. Typ. Max. Units

RF Functional Tests

Peak Input Power

PIN

-

5.2

7.9

W

Power Gain

GP

18

19.8

-

dB

Drain Efficiency

Pulse Droop

VDD = 50 V, IDQ = 400 mA,

ηD

51

60

-

%

Pulse Width = 128 μs, Duty Cycle = 10%,

POUT = 500 W Peak (50 W avg.)

Droop

-

0.3

0.6

dB

Load Mismatch Stability

VSWR-S -

3:1

-

-

Load Mismatch Tolerance

VSWR-T -

5:1

-

-

Electrical Characteristics: TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Dynamic Characteristics

VGS = -8 V, VDS = 175 V

VDS = 5 V, ID = 75 mA

VDS = 5 V, ID = 17.5 mA

Input Capacitance

Not applicable - Input matched

Output Capacitance

Reverse Transfer Capacitance

VDS = 50 V, VGS = -8 V,

Freq. = 1 MHz

Symbol Min. Typ. Max. Units

IDS

-

1.0

30

mA

VGS (TH)

-5

-3.1

-2

V

GM

12.5 19.2

-

S

CISS

N/A N/A N/A

pF

COSS

-

55

-

pF

CRSS

-

5.5

-

pF

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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