KSC5502DT 查看數據表（PDF） - Fairchild Semiconductor

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KSC5502DT

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

Typical Performance Characteristics (Continued)

10

10

I =5I

C

B

1

T =25oC

J

T =125oC

J

0.1

1m

10m

100m

1

I [A], COLLECTOR CURRENT

C

Figure 7. Base-Emitter Saturation Voltage

1000

C

ib

F=1M H z

100

C

ob

10

1

10

100

REVERSE VOLTAGE[V]

Figure 9. Collector Output Capacitance

5

4.5

4

I =5I =2I

C

B1

B2

V =300V

3.5

CC

PW =20μs

3

2.5

2

T =125oC

J

T =25oC

1.5

J

1

0.3

0 .5

1

1 .5

2

2.5 3

I [A], COLLECTOR CURRENT

C

Figure 11. Resistive Switching Time, toff

1

T =25oC

J

T =125oC

J

0.1

1m

10m

100m

1

I [A], FORW ARD CURRENT

FD

Figure 8. Diode Forward Voltage

2000

1000

900

800

700

600

500

400

300

200

I =5I =2I

C

B1

B2

V =300V

CC

PW=20μ s

T =125oC

J

T =25oC

J

100

0.3

0 .5

1

1 .5

2

I [A], COLLECTOR CURRENT

C

2.5 3

Figure 10. Resistive Switching Time, ton

2000

1000

900

800

700

600

500

400

300

I =5I =5I

C

B1

B2

V =300V

c

PW =20μs

200

T =125oC

J

T =25oC

J

100

0.3

0 .5

1

1 .5

2

I [A], COLLECTOR CURRENT

C

2.5 3

Figure 12. Resistive Switching Time, ton

© 2000 Fairchild Semiconductor Corporation

KSC5502D / KSC5502DT Rev. 1.1.0

5

www.fairchildsemi.com

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