Typical Characteristics (Continued)
10
IC =5IB
1
TJ=25℃
TJ=125℃
0.1
1m
10m
100m
1
I [A], CO LLECTOR CURRENT
C
Figure 7. Base-Emitter Saturation Voltage
1000
C
ib
F=1MHz
100
C
ob
10
1
10
100
REVERSE VOLTAGE[V]
Figure 9. Collector Output Capacitance
5
4.5
4
IC = 5IB 1 = 2IB 2
V =300V
CC
3.5
P W =20us
3
2.5
2
T =125℃
J
T =25℃
J
1.5
1
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1
2
3
IC[A], CO LLECTO R CURRENT
Figure 11. Resistive Switching Time, toff
©2001 Fairchild Semiconductor Corporation
10
1
T =25℃
J
T =125℃
J
0.1
1m
10m
100m
1
I [A], FORW ARD CURRENT
FD
Figure 8. Diode Forward Voltage
2000
1000
900
800
700
600
500
400
300
200
I =5I =2I
C
B1
B2
V CC=300V
PW=20us
TJ=125℃
T =25℃
J
100
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1
2
3
I [A], COLLECTOR CURRENT
C
Figure 10. Resistive Switching Time, ton
2000
1000
900
800
700
600
500
400
300
I =5I =5I
C
B1
B2
V =300V
c
PW=20us
200
T =125℃
J
TJ=25℃
100
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1
2
3
I [A], COLLECTOR CURRENT
C
Figure 12. Resistive Switching Time, ton
Rev. A2, August 2001