KSC5502DT(2001) 查看數據表（PDF） - Fairchild Semiconductor
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KSC5502DT Datasheet PDF : 11 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Cib
Cob
fT
VF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
IC=1mA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCES=1200V,
VBE=0
TC=25°C
TC=125°C
VCE=600V, IB=0 TC=25°C
TC=125°C
VEB=12V, IC=0
TC=25°C
VCE=1V, IC=0.2A TC=25°C
TC=125°C
VCE=1V, IC=1A
TC=25°C
TC=125°C
VCE=2.5V,
IC=0.5A
TC=25°C
TC=125°C
IC=0.2A,
IB=0.02A
TC=25°C
TC=125°C
IC=0.4A,
IB=0.08A
TC=25°C
TC=125°C
IC=1A, IB=0.2A
TC=25°C
TC=125°C
IC=0.4A,
IB=0.08A
TC=25°C
TC=125°C
IC=1A, IB=0.2A
TC=25°C
TC=125°C
VEB=8V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.5A,VCE=10V
IF=0.2A
TC=25°C
TC=125°C
IF=0.4A
TC=25°C
TC=125°C
IF=1A
TC=25°C
Min.
1200
600
12
15
8
4
3
12
6
Typ.
1350
750
13.7
28
18
6.4
4.7
20
12
0.31
0.54
0.15
0.23
0.40
1.3
0.77
0.60
0.83
0.70
385
60
11
0.75
0.59
0.80
0.64
0.9
Max.
100
500
100
500
10
40
30
0.8
1.1
0.6
1.0
1.5
3.0
1.0
0.9
1.2
1.0
500
100
1.2
1.3
1.5
Units
V
V
V
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
pF
pF
MHz
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
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