ZXMN6A11G 查看數據表（PDF） - Zetex => Diodes
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ZXMN6A11G Datasheet PDF : 8 Pages
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ZXMN6A11G
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ VGS= 10V; Tamb=25°C(b)
@ VGS= 10V; Tamb=70°C(b)
@ VGS= 10V; Tamb=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj, Tstg
Limit
60
±20
4.4
Unit
V
V
A
3.5
3.1
15.6
A
5
A
15.6
A
2.0
W
16
mW/°C
3.9
W
31
mW/°C
-55 to +150 °C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Symbol
R⍜JA
R⍜JA
Limit
62.5
32
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Issue 4 - September 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com
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