ZXMN2A02X8(2005) 查看數據表（PDF） - Zetex => Diodes

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ZXMN2A02X8
(Rev.:2005)

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN2A02X8

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

20

V

ID=250µA, VGS=0V

1 µA VDS=20V, VGS=0V

100 nA

VGS=Ϯ12V, VDS=0V

0.7

V

I

=25

D

0

µA

,

VDS=

VGS

0.02 Ω

0.04 Ω

VGS=4.5V, ID=11A

VGS=2.5V, ID=8.4A

27

S

VDS=10V,ID=11A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

1900

356

218

pF

VDS=10 V, VGS=0V,

pF f=1MHz

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

7.9

10

33.3

13.6

18.6

5.2

4.9

ns

ns

VDD =10V, ID=1A

ns

RG=6.0Ω, VGS=4.5V

ns

nC

VDS=10V,VGS=4.5V,

nC ID=11A

nC

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge (3)

Qrr

0.85 0.95 V

16.3

ns

7.8

nC

TJ=25°C, IS=11.5A,

VGS=0V

TJ=25°C, IF=2.1A,

di/dt= 100A/µs

NOTES

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 2 - JANUARY 2005

4

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