STW45NM60 查看數據表（PDF） - STMicroelectronics
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STW45NM60 Datasheet PDF : 12 Pages
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STW45NM60
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD = 250V, ID = 22.5A
RG = 4.7Ω VGS = 10V
Figure 13
VDD = 400V, ID = 45A,
RG = 4.7Ω, VGS = 10V
Figure 13
Min.
Typ. Max. Unit
30
ns
20
ns
16
ns
23
ns
40
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD
ISDM
VSD (1)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45A, VGS = 0
ISD = 45A,
di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
Figure 15
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45A,
di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
Figure 15
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Typ.
508
10
40
650
14
43
Max. Unit
45 A
180 A
1.5 V
ns
µC
A
ns
µC
A
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