UPD16803 查看數據表（PDF） - NEC => Renesas Technology

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UPD16803

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

NEC => Renesas Technology 

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD16803

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION

The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage.

By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage

and power consumption as compared with conventional driver circuits that use bipolar transistors.

In addition, the drive current can be adjusted by an external resistor in a power-saving mode.

The µPD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head

actuator of an FDD.

FEATURES

• Low ON resistance (sum of ON resistors of top and bottom transistors)

RON1 = 1.5 Ω TYP. (VM = 5.0 V)

RON2 = 2.0 Ω TYP. (VM = 12.0 V)

• Low current consumption: IDD = 0.4 mA TYP.

• Stop mode function that turns OFF all output transistors

• Compact surface mount package: 20-pin plastic SOP (300 mil)

PIN CONFIGURATION (Top View)

C1H

1

C2L

2

VM1

3

1A

4

PGND

5

2A

6

VDD

7

IN1

8

IN2

9

INC

10

20

C1L

19

C2H

18

VG

17

1B

16

PGND

15

2B

14

VM2

13

RX

12

PS

11

DGND

Document No. S11452EJ2V0DS00 (2nd edition)

Date Published July 1997 N

Printed in Japan

©

1997

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